Locally rewritable codes for resistive memories

摘要

We propose locally rewritable codes (LWC) for resistive memories inspired bylocally repairable codes (LRC) for distributed storage systems. Small values ofrepair locality of LRC enable fast repair of a single failed node since thelost data in the failed node can be recovered by accessing only a smallfraction of other nodes. By using rewriting locality, LWC can improve endurancelimit and power consumption which are major challenges for resistive memories.We point out the duality between LRC and LWC, which indicates that existingconstruction methods of LRC can be applied to construct LWC.